Thermoelectrical properties of superlattices

Author

Melnichuk, S.V. ; Kosyachenko, S.V. ; Vozny, M.V.

Author_Institution

Inst. of Thermoelectr., Chernivtsy

fYear

1997

fDate

26-29 Aug 1997

Firstpage

438

Lastpage

441

Abstract

Recent investigations show that thermoelectric properties of superlattices, where electronic density of states is two-dimensional, may be greatly improved. In our report the calculations of thermoelectric properties of Si/Ge superlattices are proposed. Superlattice band structure was calculated in the frame of the tight-binding model (sp³s^*). The obtained band structure allows us to calculate the electronic density of states. The Fermi level was determined from the neutrality equation. Kinetic coefficients were calculated within the relaxation time approximation. The calculated figure of merit of a superlattice is compared to that of Si-Ge alloy

Keywords

Fermi level; band structure; carrier relaxation time; electronic density of states; elemental semiconductors; germanium; semiconductor superlattices; silicon; thermoelectricity; tight-binding calculations; 2D electronic density of states; Fermi level; Si-Ge; Si-Ge alloy; Si/Ge; SiGe; band structure; figure of merit; kinetic coefficients; neutrality equation; relaxation time approximation; superlattices; thermoelectric properties; tight-binding model; Atomic layer deposition; Crystals; Electrons; Equations; Kinetic theory; Lattices; Semiconductor process modeling; Semiconductor superlattices; Temperature; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on

Conference_Location

Dresden

ISSN

1094-2734

Print_ISBN

0-7803-4057-4

Type

conf

DOI

10.1109/ICT.1997.667180

Filename

667180