PbSnTe:In-based broadband detector of terahertz radiation

Author

Klimov, Alexander E. ; Shumsky, Vladimir N.

Author_Institution

Inst. of Semicond. Phys., Novosibirsk, Russia

fYear

2009

fDate

21-25 Sept. 2009

Firstpage

1

Lastpage

2

Abstract

Principles of operation of an injection-type terahertz photodetector based on PbSnTe:In films with adjustable spectral sensitivity range are described. Current-voltage characteristics of the photosensitive structures, defined by the electron trapping at localized states in the bandgap of PbSnTe:In and by the excitation of electrons from these states under the action of free-electron laser radiation, are reported.

Keywords

IV-VI semiconductors; doping profiles; electron traps; energy gap; free electron lasers; indium; lead compounds; molecular beam epitaxial growth; photochemistry; photodetectors; semiconductor doping; semiconductor thin films; terahertz wave detectors; tin compounds; MBE; PbSnTe:In; adjustable spectral sensitivity; broadband detector; current-voltage characteristics; doping level; electron trapping; free-electron laser radiation; injection-type terahertz photodetector; localized states; photosensitive structure; terahertz radiation; Charge carriers; Current; Current-voltage characteristics; Electron traps; Free electron lasers; Indium; Lighting; Photodetectors; Radiation detectors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4244-5416-7

Electronic_ISBN

978-1-4244-5417-4

Type

conf

DOI

10.1109/ICIMW.2009.5325628

Filename

5325628