DocumentCode
2326880
Title
Modeling of temperature effect on threshold voltage of ballistic Ge tunneling FET
Author
Siddiqui, Saima Afroz ; Zubair, Ahmad ; Shoron, Omor Faruk ; Khosru, Quazi D M
Author_Institution
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
fYear
2010
fDate
18-20 Dec. 2010
Firstpage
235
Lastpage
238
Abstract
The effect of temperature and scaling of gate length on the threshold voltage of double gate Ge tunneling FET has been studied. The threshold voltage has been determined from transconductance rather than constant current method. In the 10 nm to 50 nm range scaling has almost no effect on threshold voltage. However, threshold voltage is function of temperature in the range of 250-500 K. Besides, a simple model for threshold voltage incorporating the temperature effect has been developed for ballistic Ge tunneling FET based on the simulated results.
Keywords
elemental semiconductors; field effect transistors; germanium; semiconductor device models; Ge; ballistic tunneling FET; constant current method; gate length scaling; size 10 nm to 50 nm; temperature 250 K to 500 K; temperature effect modelling; threshold voltage; Tunnel FET; band to band tunneling; gate threshold voltage; scaling; temperature; transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Computer Engineering (ICECE), 2010 International Conference on
Conference_Location
Dhaka
Print_ISBN
978-1-4244-6277-3
Type
conf
DOI
10.1109/ICELCE.2010.5700671
Filename
5700671
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