• DocumentCode
    2327766
  • Title

    Characterization of silicon nanowires

  • Author

    Leung, D.M.H. ; Rahman, B.M.A. ; Tanvir, H. ; Ashraf, M.A. ; Kejalakshmy, N. ; Kabir, R.

  • Author_Institution
    Sch. of Eng. & Math. Sci., City Univ. London, London, UK
  • fYear
    2010
  • fDate
    18-20 Dec. 2010
  • Firstpage
    438
  • Lastpage
    441
  • Abstract
    The full-vectorial H and E-field profiles along with Poynting vector are shown for several nanoscale silicon waveguides.
  • Keywords
    elemental semiconductors; finite element analysis; nanowires; optical waveguides; refractive index; semiconductor quantum wires; silicon; E-field profile; Si; finite element method; full-vectorial H-field profile; nanoscale silicon waveguides; poynting vector; silicon nanowire characterization; Nanowires; Numerical analysis; Waveguides;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Computer Engineering (ICECE), 2010 International Conference on
  • Conference_Location
    Dhaka
  • Print_ISBN
    978-1-4244-6277-3
  • Type

    conf

  • DOI
    10.1109/ICELCE.2010.5700723
  • Filename
    5700723
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2327766