• DocumentCode
    2328999
  • Title

    Single-Wafer Processing And Real-Time Process Control For Semiconductor Integrated Circuit Manufacturing

  • Author

    Bowling, A.

  • Author_Institution
    Texas Instruments Incorporated
  • fYear
    1994
  • fDate
    21-22 June 1994
  • Firstpage
    31
  • Lastpage
    33
  • Abstract
    For 300 mm and larger diameter silicon wafer processing, it is clear that single-wafer processing will play a dominant role. In addition to current use of single-wafer processing for lithography, plasma etch, and metal deposition, recent research has shown that single-wafer processing will even displace most batch furnace processes and wafersurface preparation processes. In addition, the implementation of in-situ sensors will allow the use of real-time process control to improve process reproducibility and equipment utilization.
  • Keywords
    Chemical vapor deposition; Etching; Plasma applications; Plasma chemistry; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Process control; Rapid thermal processing; Reproducibility of results;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 1994. Extended Abstracts of ISSM '94. 1994 International Symposium on
  • Conference_Location
    Tokyo, Japan
  • Type

    conf

  • DOI
    10.1109/ISSM.1994.729417
  • Filename
    729417