DocumentCode
2328999
Title
Single-Wafer Processing And Real-Time Process Control For Semiconductor Integrated Circuit Manufacturing
Author
Bowling, A.
Author_Institution
Texas Instruments Incorporated
fYear
1994
fDate
21-22 June 1994
Firstpage
31
Lastpage
33
Abstract
For 300 mm and larger diameter silicon wafer processing, it is clear that single-wafer processing will play a dominant role. In addition to current use of single-wafer processing for lithography, plasma etch, and metal deposition, recent research has shown that single-wafer processing will even displace most batch furnace processes and wafersurface preparation processes. In addition, the implementation of in-situ sensors will allow the use of real-time process control to improve process reproducibility and equipment utilization.
Keywords
Chemical vapor deposition; Etching; Plasma applications; Plasma chemistry; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Process control; Rapid thermal processing; Reproducibility of results;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 1994. Extended Abstracts of ISSM '94. 1994 International Symposium on
Conference_Location
Tokyo, Japan
Type
conf
DOI
10.1109/ISSM.1994.729417
Filename
729417
Link To Document