24 GHz low phase noise HBT dielectric resonator oscillator

Author

Vryonides, P. ; Nikolaou, S. ; Haralambous, H.

Author_Institution

Frederick Univ., Nicosia, Cyprus

fYear

2010

fDate

12-13 April 2010

Firstpage

1

Lastpage

4

Abstract

This paper describes the design and performance of a novel, planar 24 GHz low phase noise GaAs HBT dielectric resonator oscillator (DRO) for millimeter wave short range radar sensors for automotive and industrial applications. The detailed design, circuit development and experimental results for the DRO are presented and discussed. The measurement of the oscillator showed a center frequency of 23.82 GHz with a fundamental output power of 3.33 dBm and a phase noise performance of -125.67 dBc/Hz at 100 KHz offset, the lowest yet reported.

Keywords

III-V semiconductors; circuit noise; dielectric resonator oscillators; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave oscillators; phase noise; GaAs; frequency 23.82 GHz; frequency 24 GHz; Dielectrics; Gallium arsenide; Heterojunction bipolar transistors; Millimeter wave circuits; Millimeter wave measurements; Millimeter wave radar; Oscillators; Phase noise; Radar applications; Sensor phenomena and characterization; HBT; Phase noise; dielectric resonator oscillator;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Microwave Technology Conference (WAMICON), 2010 IEEE 11th Annual

Conference_Location

Melbourne, FL

Print_ISBN

978-1-4244-6688-7

Type

conf

DOI

10.1109/WAMICON.2010.5461885

Filename

5461885