DocumentCode
2329849
Title
Designing ultra-low voltage PLL Using a bulk-driven technique
Author
Chao, Ting-Sheng ; Lo, Yu-Lung ; Yang, Wei-Bin ; Cheng, Kuo-Hsing
Author_Institution
Dept. of SOC Technol. Center, Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
388
Lastpage
391
Abstract
This paper describes an ultra-low voltage phase-locked loop (PLL) using a bulk-driven technique. The architecture of the proposed PLL employs the bulk-input technique to produce a voltage-controlled oscillator (VCO) and the forward-body-bias scheme to produce a divider. This approach effectively reduces the threshold voltage of the MOSFETs, enabling the PLL to be operated at an ultra-low voltage. The chip is fabricated in a 0.13-mum standard CMOS process with a 0.5 V power supply voltage. The measurement results demonstrate that this PLL can operate from 360 to 610 MHz with a 0.5 V power supply voltage. At 550 MHz, the measured rms jitter and peak-to-peak jitter are 8.01 ps and 56.36ps, respectively. The total power consumption of the PLL is 1.25 mW and the active die area of PLL is 0.04 mm2.
Keywords
CMOS integrated circuits; dividing circuits; phase locked loops; power integrated circuits; voltage control; active die area; bulk-driven technique; bulk-input technique; divider; forward-body-bias scheme; frequency 360 MHz to 610 MHz; power supply voltage; standard CMOS process; threshold voltage; time 8.01 ps; total power consumption; ultra-low voltage PLL; voltage 0.5 V; voltage-controlled oscillator; CMOS process; Jitter; MOSFETs; Phase locked loops; Power measurement; Power supplies; Semiconductor device measurement; Threshold voltage; Voltage measurement; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
ESSCIRC, 2009. ESSCIRC '09. Proceedings of
Conference_Location
Athens
ISSN
1930-8833
Print_ISBN
978-1-4244-4354-3
Type
conf
DOI
10.1109/ESSCIRC.2009.5325983
Filename
5325983
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