DocumentCode
2330148
Title
Floating gate MOSFET based Operational Transconductance Amplifier and study of mismatch
Author
Babu, V. Suresh ; Sekhar, Ambika ; Salini Devi, R. ; Baiju, M.R.
Author_Institution
Dept. of Electron. & Commun., Coll. of Eng., Trivandrum, Trivandrum
fYear
2009
fDate
25-27 May 2009
Firstpage
127
Lastpage
132
Abstract
This paper presents an Operational Transconductance Amplifier realized using Floating Gate MOSFETs only. This can be used as Neuron Activation Function with wide linear range and adaptable threshold level and slope. This circuit is suitable for analog signal processing and neural network applications. This circuit generates log sigmoid and tan sigmoid NAF functions simultaneously. In this circuit the parameters of NAF function can be easily changed by changing voltage at the control gate of FGMOSFET. The linear range of the proposed FGMOSFET based OTA circuit is large and is equal to 2 V with a power supply of +0.75 V. Power analysis and noise analysis of the proposed circuit is performed. Mismatch study is performed using Monte Carlo simulation. TSPICE simulation results using 2 mum N-well process are presented. Layout design of the circuit is done using L-Edit in Tanner Tool.
Keywords
MOSFET; Monte Carlo methods; SPICE; analogue processing circuits; circuit noise; neural nets; operational amplifiers; Monte Carlo simulation; OTA circuit; TSPICE simulation; analog signal processing; floating gate MOSFET; layout design; log sigmoid generation; neural network application; neuron activation function; noise analysis; operational transconductance amplifier; power analysis; tan sigmoid NAF function; Circuit noise; MOSFET circuits; Neural networks; Neurons; Operational amplifiers; Performance analysis; Power supplies; Signal processing; Transconductance; Voltage control; Floating Gate MOSFET; Monte Carlo simulation; OTA; mismatch;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics and Applications, 2009. ICIEA 2009. 4th IEEE Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4244-2799-4
Electronic_ISBN
978-1-4244-2800-7
Type
conf
DOI
10.1109/ICIEA.2009.5138183
Filename
5138183
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