DocumentCode
2330279
Title
A implementation of fully integrated frequency synthesizer For ISM band transceiver
Author
Chung, Younwoong ; Burm, Jinwook
Author_Institution
Dept. of Electron. Eng., Sogang Univ., Seoul
fYear
2008
fDate
Nov. 30 2008-Dec. 3 2008
Firstpage
1708
Lastpage
1711
Abstract
A fully integrated frequency synthesizer for ISM band transceiver has to exhibit low phase noise characteristic and small chip size. For the designed frequency synthesizer, the center frequency is 1.2 GHz and linear tuning range of over 450 MHz. To improve the performance of the frequency synthesizer, the phase noise of voltage controlled oscillator is minimized by enhancing Q-factor of the inductor through an inductor design modeling. In addition, an improved charge pump is proposed to minimize non-ideal effect of its performance. The simulation showed the proposed charge pump improved the jitter to 1.5 ns compared with 2.37 ns of the conventional charge pump. The designed circuits have been implemented with 0.18 mum RF CMOS technology.
Keywords
Q-factor; frequency synthesizers; inductors; phase noise; transceivers; ISM band transceiver; RF CMOS technology; charge pump; frequency synthesizer; inductor Q-factor; inductor design modeling; low phase noise characteristic; voltage controlled oscillator; CMOS technology; Charge pumps; Frequency synthesizers; Inductors; Phase noise; Q factor; Semiconductor device modeling; Transceivers; Tuning; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2008. APCCAS 2008. IEEE Asia Pacific Conference on
Conference_Location
Macao
Print_ISBN
978-1-4244-2341-5
Electronic_ISBN
978-1-4244-2342-2
Type
conf
DOI
10.1109/APCCAS.2008.4746368
Filename
4746368
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