• DocumentCode
    2330279
  • Title

    A implementation of fully integrated frequency synthesizer For ISM band transceiver

  • Author

    Chung, Younwoong ; Burm, Jinwook

  • Author_Institution
    Dept. of Electron. Eng., Sogang Univ., Seoul
  • fYear
    2008
  • fDate
    Nov. 30 2008-Dec. 3 2008
  • Firstpage
    1708
  • Lastpage
    1711
  • Abstract
    A fully integrated frequency synthesizer for ISM band transceiver has to exhibit low phase noise characteristic and small chip size. For the designed frequency synthesizer, the center frequency is 1.2 GHz and linear tuning range of over 450 MHz. To improve the performance of the frequency synthesizer, the phase noise of voltage controlled oscillator is minimized by enhancing Q-factor of the inductor through an inductor design modeling. In addition, an improved charge pump is proposed to minimize non-ideal effect of its performance. The simulation showed the proposed charge pump improved the jitter to 1.5 ns compared with 2.37 ns of the conventional charge pump. The designed circuits have been implemented with 0.18 mum RF CMOS technology.
  • Keywords
    Q-factor; frequency synthesizers; inductors; phase noise; transceivers; ISM band transceiver; RF CMOS technology; charge pump; frequency synthesizer; inductor Q-factor; inductor design modeling; low phase noise characteristic; voltage controlled oscillator; CMOS technology; Charge pumps; Frequency synthesizers; Inductors; Phase noise; Q factor; Semiconductor device modeling; Transceivers; Tuning; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2008. APCCAS 2008. IEEE Asia Pacific Conference on
  • Conference_Location
    Macao
  • Print_ISBN
    978-1-4244-2341-5
  • Electronic_ISBN
    978-1-4244-2342-2
  • Type

    conf

  • DOI
    10.1109/APCCAS.2008.4746368
  • Filename
    4746368