DocumentCode
2330586
Title
Parameter extraction for a power diode circuit simulator model including temperature dependent effects
Author
Kang, X. ; Caiafa, A. ; Santi, E. ; Hudgins, J.L. ; Palmer, P.R.
Author_Institution
Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA
Volume
1
fYear
2002
fDate
2002
Firstpage
452
Abstract
Power electronics designers need accurate models of power diodes to perform simulations of the systems they are designing. The diode models should be accurate under a wide variety of operating conditions. In particular temperature dependencies should be accurately modeled. Physics-based models appear to be the best choice to meet these requirements. On the other hand, complicated parameter extraction procedures discourage use of these models by practicing engineers. In this work we explore the possibility of using a sophisticated physics-based diode model utilizing at most three parameters obtained directly or estimated from the manufacturer´s data sheets. In order to validate the proposed approach, several diodes with different characteristics are tested under different conditions and a wide temperature range from -150 to 150°C. Experimental results are compared with simulations
Keywords
power semiconductor diodes; semiconductor device models; -150 to 150 C; diode models; operating conditions; parameter extraction; parameter extraction procedures; power diode circuit simulator model; power electronics designers; temperature dependent effects; Circuit simulation; Circuit testing; Electronic equipment testing; Parameter extraction; Power electronics; Power system modeling; Semiconductor diodes; Semiconductor process modeling; Temperature dependence; Virtual manufacturing;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 2002. APEC 2002. Seventeenth Annual IEEE
Conference_Location
Dallas, TX
Print_ISBN
0-7803-7404-5
Type
conf
DOI
10.1109/APEC.2002.989284
Filename
989284
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