An estimation of the inversion charge influenced by quantum effect for sub-20nm MOSFETs

Author

Yamamoto, Masahiro ; Hiroki, Akira ; Yoon, Jong Chul

Author_Institution

Grad. Sch. of Sci. & Technol., Kyoto Inst. of Technol., Kyoto, Japan

fYear

2012

fDate

9-11 May 2012

Firstpage

1

Lastpage

2

Abstract

We investigate the inversion charge for sub-20nm MOSFETs. The inversion charge Q_i calculated by using the standard analytical model is compared with that using S/P model, which solves the Schrödinger and Poisson equations self-consistently. Test devices are low operating power bulk nMOSFETs having physical gate lengths L_g from 22 to 18nm. It is found that |Q_i| using the analytical model is 24%-40% larger than that using S/P model. This discrepancy comes from the difference of surface potential estimation.

Keywords

MOSFET; Poisson equation; Schrodinger equation; low-power electronics; Poisson equations; S-P model; Schrodinger equations; inversion charge estimation; low operating power bulk nMOSFET; quantum effect; size 22 nm to 18 nm; standard analytical model; surface potential estimation; Analytical models; Electric potential; Electrostatics; Logic gates; MOSFETs; Mathematical model; Silicon; Schrödinger Poisson model; inversion charge; low operating power MOSFETs; sub-20nm MOSFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-4673-0837-3

Type

conf

DOI

10.1109/IMFEDK.2012.6218596

Filename

6218596