DocumentCode
2332302
Title
Observation of direct tunneling conduction for TDTFT in high temperatures
Author
Kobayashi, T. ; Matsuo, N. ; Heya, A. ; Omura, Y. ; Yokoyama, S.
Author_Institution
Dept. of Mater. Sci. & Chem., Univ. of Hyogo, Himeji, Japan
fYear
2012
fDate
9-11 May 2012
Firstpage
1
Lastpage
2
Abstract
We calculated the tunneling current in the high temperatures and discussed the dominant conduction mechanism of TDTFT. Although the discrepancy between the measured and the calculated data is approximately one order, the increase ratio of Id to absolute temperature is nearly equal for the measured and the calculated one. These data strongly indicate that the dominant mechanism of the Id in the high temperatures for the TDTFT is direct tunneling (DT) from the tail area in the Fermi-Dirac distribution function of Al.
Keywords
thin film transistors; tunnel transistors; Fermi-Dirac distribution function; TDTFT; direct tunneling conduction; dominant conduction mechanism; high temperatures; tunneling current; Current measurement; Electrodes; Logic gates; Silicon; Temperature distribution; Temperature measurement; Tunneling; Direct tunneling; High temperature; SiNX ; TDTFT;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location
Osaka
Print_ISBN
978-1-4673-0837-3
Type
conf
DOI
10.1109/IMFEDK.2012.6218599
Filename
6218599
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