• DocumentCode
    2332302
  • Title

    Observation of direct tunneling conduction for TDTFT in high temperatures

  • Author

    Kobayashi, T. ; Matsuo, N. ; Heya, A. ; Omura, Y. ; Yokoyama, S.

  • Author_Institution
    Dept. of Mater. Sci. & Chem., Univ. of Hyogo, Himeji, Japan
  • fYear
    2012
  • fDate
    9-11 May 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We calculated the tunneling current in the high temperatures and discussed the dominant conduction mechanism of TDTFT. Although the discrepancy between the measured and the calculated data is approximately one order, the increase ratio of Id to absolute temperature is nearly equal for the measured and the calculated one. These data strongly indicate that the dominant mechanism of the Id in the high temperatures for the TDTFT is direct tunneling (DT) from the tail area in the Fermi-Dirac distribution function of Al.
  • Keywords
    thin film transistors; tunnel transistors; Fermi-Dirac distribution function; TDTFT; direct tunneling conduction; dominant conduction mechanism; high temperatures; tunneling current; Current measurement; Electrodes; Logic gates; Silicon; Temperature distribution; Temperature measurement; Tunneling; Direct tunneling; High temperature; SiNX; TDTFT;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
  • Conference_Location
    Osaka
  • Print_ISBN
    978-1-4673-0837-3
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2012.6218599
  • Filename
    6218599