DocumentCode
2334039
Title
0.18um 3.1–10.6GHz CMOS UWB LNA with 25 ±1dB gain
Author
Shamsadini, Shila ; Kashani, Farokh Hojat ; Bathaei, Neda
Author_Institution
Electr. Eng., Azad Univ., Tehran, Iran
fYear
2010
fDate
1-3 Dec. 2010
Firstpage
1
Lastpage
2
Abstract
A 3.1-10.6GHz ultra-wideband low noise-amplifier (UWB LNA) using standard 0.18um CMOS technology has been reported. A two-stage, common-gate in cascade with cascode, UWB LNA has been proposed to achieve more than 10dB input and output return loss, high gain of 26dB, and NF of 2.9dB over the full frequency band. The proposed LNA consumes 10mW from 1.8V supply. The designed LNA has an excellent high gain in comparison with previous works.
Keywords
CMOS analogue integrated circuits; MMIC amplifiers; field effect MMIC; low noise amplifiers; ultra wideband technology; CMOS technology; frequency 3.1 GHz to 10.6 GHz; gain 2.9 dB; gain 26 dB; power 10 mW; return loss; size 0.18 mum; ultra-wideband low noise-amplifier; voltage 1.8 V;
fLanguage
English
Publisher
ieee
Conference_Titel
Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4244-8853-7
Type
conf
DOI
10.1109/ESCINANO.2010.5701068
Filename
5701068
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