• DocumentCode
    2335144
  • Title

    Fundamental characteristics of electrostatic wafer chuck with insulating sealant

  • Author

    Yatsuzuka, Kyoko ; Hatakeyama, Famikazu ; Asano, Kazutoshi ; Aonuma, Shinichiro

  • Author_Institution
    Dept. of Electr. & Inf. Eng., Yamagata Univ., Japan
  • Volume
    3
  • fYear
    1998
  • fDate
    12-15 Oct. 1998
  • Firstpage
    1733
  • Abstract
    In the semiconductor industry, many manufacturing processes, such as CVD or dry etching, are performed in vacuum condition. The electrostatic wafer chuck is the most preferable handling method under such circumstances. It enables retention of a wafer flat and enhanced heat transfer through the whole surface area because the wafer can firmly contact with the chuck. We have investigated the fundamental study of an electrostatic chuck with comb type electrodes and a thin dielectric film. In order to remove the air gap between them, silicone oil is used as a filler to prevent breakdown. The experimental results proved the potential to use the electrostatic chuck for silicon wafer handling. There, however, is a problem which comes from using silicone oil as an insulating filler. The thin dielectric film is easily deformed by tension when the object starts moving. In this report experimental results of the electrostatic wafer chuck are shown when insulating sealant, instead of silicone oil, is used. The electrostatic force acting on the 4 inch silicon wafer is examined with several types of sealant and dielectric films. The electrostatic force increased with the square of the applied voltage for lower voltage and gradually saturated at higher voltage, and the maximum force obtained was approximately 30 N.
  • Keywords
    dielectric thin films; electrodes; electronic equipment manufacture; electrostatic devices; heat transfer; seals (stoppers); 4 in; CVD; air gap removal; breakdown prevention; capacitance model; comb type electrodes; dry etching; electrostatic force; electrostatic wafer chuck; enhanced heat transfer; handling method; insulating sealant; manufacturing processes; semiconductor industry; silicon wafer handling; silicone oil; thin dielectric film; vacuum condition; wafer flat retention; Dielectric films; Dielectrics and electrical insulation; Electronics industry; Electrostatics; Manufacturing processes; Oil insulation; Petroleum; Sealing materials; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
  • Conference_Location
    St. Louis, MO, USA
  • ISSN
    0197-2618
  • Print_ISBN
    0-7803-4943-1
  • Type

    conf

  • DOI
    10.1109/IAS.1998.729806
  • Filename
    729806