MOVPE growth and characterisation of (Al,Ga)N layers

Author

Paszkiewiczt, R. ; Korbutowicz, R. ; Radziewicz, D. ; Panek, M. ; Paszkiewicz, R. ; Kozlowski, J. ; Boratynski, B. ; Tlaczala, M.

Author_Institution

Inst. of Microsyst. Technol., Wroclaw Univ. of Technol., Poland

fYear

1998

fDate

5-7 Oct. 1998

Firstpage

59

Lastpage

62

Abstract

The group III nitrides are promising materials for optoelectronic devices high temperature electronics and high power microwave devices. At the moment, MOVPE (Metalorganic Vapour Phase Epitaxy) seems to be the most successful and the most promising method and /spl alpha/ sapphire is believed to be the best substrate for GaN deposition. The paper presents the achievements in (Al,Ga)N deposition at the Institute of Microsystem Technology, Wroclaw University of Technology. The correlation between structural, optical and electrical properties of thick undoped high temperature GaN buffer layer and thin undoped AlGaN spacer layer grown on it are shown and discussed.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; (Al,Ga)N layer; /spl alpha/-sapphire substrate; AlGaN; AlGaN spacer layer; GaN buffer layer; MOVPE growth; group III nitride; metalorganic vapour phase epitaxy; Epitaxial growth; Epitaxial layers; Gallium nitride; Microwave devices; Optical buffering; Optoelectronic devices; Paper technology; Space technology; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Conference_Location

Smolenice Castle, Slovakia

Print_ISBN

0-7803-4909-1

Type

conf

DOI

10.1109/ASDAM.1998.730166

Filename

730166