DocumentCode
2340844
Title
Parameter extraction and optimization for new industry standard VBIC model
Author
Cao, X. ; McMacken, J. ; Stiles, K. ; Layman, P. ; Liou, J.J. ; Sun, A. ; Moinian, S.
Author_Institution
Univ. of Central Florida, Orlando, FL, USA
fYear
1998
fDate
5-7 Oct 1998
Firstpage
107
Lastpage
116
Abstract
A new bipolar transistor model called VBIC has recently been developed and is likely to replace the Gummel-Poon model as the new industry standard bipolar transistor model. This paper seeks to develop an accurate, comprehensive and efficient methodology to extract the parameters for the VBIC using the parameters extracted will be compared under various bias operation conditions
Keywords
bipolar transistors; semiconductor device models; VBIC model; bipolar transistor; industry standard; optimization; parameter extraction; Bipolar integrated circuits; Bipolar transistor circuits; Bipolar transistors; Computer industry; Equivalent circuits; Integrated circuit modeling; Modems; Parameter extraction; Standards development; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location
Smolenice Castle
Print_ISBN
0-7803-4909-1
Type
conf
DOI
10.1109/ASDAM.1998.730178
Filename
730178
Link To Document