DocumentCode
2341213
Title
Surface-oriented and bulk GaAs and InP detectors for X-ray diagnostics of laser plasmas
Author
Ryc, Leszek ; Riesz, Ferenc ; Pfeifer, M. ; Korobkin, Yu.V.
Author_Institution
Inst. of Plasma Phys. & Laser Microfusion, Warsaw, Poland
fYear
1998
fDate
5-7 Oct 1998
Firstpage
187
Lastpage
190
Abstract
Bulk and surface-oriented GaAs and InP photoconductive detectors were fabricated for laser-plasma diagnostic purposes. Current-voltage curves, pulse-height spectra measurements using light pulses and α-particles as well as pulses from different lasers are used to compare the defectors. Preliminary results using X-ray pulses from laser plasmas are presented. InP detectors were of higher performance
Keywords
III-V semiconductors; X-ray detection; gallium arsenide; indium compounds; photoconducting devices; plasma diagnostics; plasma production by laser; semiconductor counters; GaAs; InP; bulk material; current-voltage characteristics; laser plasma diagnostics; photoconductive X-ray detector; pulse-height spectra; surface-oriented material; Gallium arsenide; Indium phosphide; Optical pulses; Photoconductivity; Plasma measurements; Pulse measurements; Surface emitting lasers; X-ray detection; X-ray detectors; X-ray lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location
Smolenice Castle
Print_ISBN
0-7803-4909-1
Type
conf
DOI
10.1109/ASDAM.1998.730195
Filename
730195
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