DocumentCode
2342635
Title
Low temperatures in RTP
Author
Gutt, Th ; Steinegger, Th
Author_Institution
Infineon Technol., Munich, Germany
fYear
2002
fDate
2002
Firstpage
167
Lastpage
170
Abstract
Even though RTP was originally designed for temperatures from 700 to 1200°C the processes with lower temperatures gain more and more importance. Steady state temperatures down to 300°C make temperature control from 200°C necessary. These processes occur in silicon and in compound semiconductor production. The problems of working at low temperature and the reflow of Au-Sn solder bumps as an example are presented.
Keywords
pyrometers; rapid thermal processing; temperature control; temperature distribution; temperature measurement; thermocouples; 200 degC; 300 degC; Au-Sn; Au-Sn solder bumps reflow; Si; compound semiconductor; low temperature RTP; pyrometer; rapid thermal processing; susceptor; temperature control; temperature measurement; temperature monitoring; temperature profile; thermocouple; Control systems; Cooling; Open loop systems; Optical control; Production; Shape control; Steady-state; Switches; Temperature control; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Thermal Processing of Semiconductors, 2002. RTP 2002. 10th IEEE International Conference of
Print_ISBN
0-7803-7465-7
Type
conf
DOI
10.1109/RTP.2002.1039456
Filename
1039456
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