DocumentCode
2343280
Title
Hot-carrier effect in ultra-thin-film (UTF) fully-depleted SOI MOSFETs
Author
Bin Yu ; Zhi-Jian Ma ; Zhang, G. ; Chenming Hu
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fYear
1996
fDate
26-26 June 1996
Firstpage
22
Lastpage
23
Abstract
A systematic study was carried out on the hot-carrier (HC) effect in UTF FD SOI MOSFETs. It clarifies experimentally that even for very thin-film devices, the HC-induced damage is locally confined to the gate-oxide and only minor interface trap generation is caused on the BOX under front-channel stress. The BOX HC charging contributes less than 5% of the overall current degradation.
Keywords
MOSFET; hot carriers; silicon-on-insulator; thin film transistors; BOX; current degradation; damage; front-channel stress; gate oxide; hot-carrier effect; interface traps; ultra-thin-film fully-depleted SOI MOSFET; Current measurement; Degradation; Electrostatic measurements; Hot carrier effects; Hot carrier injection; Hot carriers; Implants; MOSFET circuits; Pulse measurements; Stress measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location
Santa Barbara, CA, USA
Print_ISBN
0-7803-3358-6
Type
conf
DOI
10.1109/DRC.1996.546300
Filename
546300
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