DocumentCode
2344939
Title
A reliability study of Au-Sn eutectic binding with Ga-As dice
Author
Matijasevic, Goran S. ; Lee, Chin C.
Author_Institution
Dept. of Electr. Eng., California Univ., CA, USA
fYear
1989
fDate
11-13 Apr 1989
Firstpage
137
Lastpage
140
Abstract
GaAs test dice successfully bonded on alumina substrates using Au-Sn eutectic alloy with static pressure but without scrubbing are discussed. A scanning acoustic microscope (SAM) having a spatial resolution of 25 μm was used to examine the quality of the bondings. Nearly perfect bondings have been achieved consistently. After 100 cycles of thermal shock between -196° and +160°C, good specimens remain well bonded without die cracking, as confirmed by the SAM images. Specimens with voids near the edge of the dice incur vertical die cracking due to the concentrated stress at the voids. Shear tests have also been performed and 95% of the specimens tested passed the MIL-STD-883C test. The resulting shear strength correlates perfectly with the quality of the bondings determined by the SAM images
Keywords
III-V semiconductors; acoustic microscopy; eutectic alloys; gallium arsenide; gold alloys; mechanical testing; microassembling; reliability; thermal stress cracking; tin alloys; -196 to 160 degC; Al2O3 substrate; Au-Sn eutectic binding; GaAs test dice; GaAs-AuSn; MIL-STD-883C test; SAM images; bonding quality; concentrated stress; reliability; scanning acoustic microscope; shear strength; shear tests; static pressure; thermal shock cycles; vertical die cracking; voids; Bonding; Frequency; Gallium arsenide; Image analysis; Microassembly; Microscopy; Signal analysis; Signal processing; Spatial resolution; X-ray imaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
Conference_Location
Phoenix, AZ
Type
conf
DOI
10.1109/RELPHY.1989.36335
Filename
36335
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