• DocumentCode
    2345126
  • Title

    Electromigration of ionized cluster beam deposited aluminum metallizations

  • Author

    Hummel, R.E.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Florida Univ., Gainesville, FL, USA
  • fYear
    1989
  • fDate
    11-13 Apr 1989
  • Firstpage
    207
  • Lastpage
    209
  • Abstract
    The activation energy of electromigration for ionized-cluster-beam-deposited aluminum films on 7000-Å-thick SiO 2 was found to be 1.1 eV compared to 0.5 eV, for conventionally deposited aluminum films. Aluminum films on oxide-free silicon did not show any hole formation or resistance increase during DC stressing
  • Keywords
    aluminium; electromigration; metallic thin films; metallisation; vapour deposited coatings; Al-SiO2; DC stressing; SiO2; activation energy; electromigration; ionised cluster beam deposition; Aluminum; Electromigration; Ion beams; Metallization; Particle beams; Semiconductor films; Silicon; Strips; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
  • Conference_Location
    Phoenix, AZ
  • Type

    conf

  • DOI
    10.1109/RELPHY.1989.36346
  • Filename
    36346
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2345126