Low-cost 38 and 77 GHz CPW MMICs using ion-implanted GaAs MESFETs

Author

Caruth, D.C. ; Shimon, R.L. ; Heins, M.S. ; Hsia, H. ; Tang, Z. ; Shen, S.C. ; Becher, D. ; Huang, J.J. ; Feng, M.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

2

fYear

2000

fDate

11-16 June 2000

Firstpage

995

Abstract

Oscillators, amplifiers, and frequency doublers at 38 and 77 GHz have been fabricated using direct ion-implanted GaAs MESFETs and CPW. The 38-GHz VCO delivers 12 d8m of power and the 77-GHz amplifier has 7.5 dB of gain. The various circuit results demonstrate that the direct ion-implanted GaAs MESFET process is a low-cost alternative to more expensive epitaxial device technologies for a wide variety of existing and emerging millimeter-wave circuit applications.

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; MMIC frequency convertors; MMIC oscillators; coplanar waveguides; field effect MIMIC; gallium arsenide; ion implantation; millimetre wave amplifiers; millimetre wave frequency convertors; millimetre wave oscillators; 38 GHz; 7.5 dB; 77 GHz; CPW MMICs; GaAs; MMIC amplifiers; MMIC frequency doublers; MMIC oscillators; ion-implanted MESFETs; millimeter-wave circuit applications; Application software; Circuits; Coplanar waveguides; Frequency; Gain; Gallium arsenide; MESFETs; MMICs; Millimeter wave technology; Noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.863524

Filename

863524