• DocumentCode
    2346716
  • Title

    Soft error immunity of 1-Volt CMOS memory cells with MTCMOS technology

  • Author

    Douseki, Takakuni ; Mutoh, Shinichiro ; Ueki, Takemi ; Yamada, Junzo

  • Author_Institution
    NTT LSI Labs., Atsugi, Japan
  • fYear
    1995
  • fDate
    22-25 Mar 1995
  • Firstpage
    107
  • Lastpage
    111
  • Abstract
    Soft error immunity of a 1-V operating CMOS memory cell is described. A test chip using multi threshold CMOS (MTCMOS) technology is fabricated and the immunity of the memory cell is evaluated. It is demonstrated that a full CMOS memory cell has high immunity at 1-V operation
  • Keywords
    CMOS memory circuits; alpha-particle effects; integrated circuit testing; α-radiation effects; 1 V; CMOS memory cells; MTCMOS technology; multi threshold CMOS; soft error immunity; test chip; Batteries; CMOS technology; Circuit noise; Laboratories; Large scale integration; Leakage current; Logic gates; Low voltage; MOSFETs; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
  • Conference_Location
    Nara
  • Print_ISBN
    0-7803-2065-4
  • Type

    conf

  • DOI
    10.1109/ICMTS.1995.513955
  • Filename
    513955
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2346716