Self-test method and recovery mechanism for high frequency TSV array

In this paper, through-silicon via (TSV) array in the form of one signal and four grounds (1S4G) are proposed to achieve high-frequency vertical connectivity for various three dimensional (3D) IC applications. Self-test method is developed to detect the conductor open and insulator short defects of TSV by capacitive and resistive measuring. Further a recovery mechanism for such a TSV array is introduced to enhance the TSV reliability. Test results will be configured to the TSV chain circuits by the central control logic and be used to determine the connection jumping between signal and redundant TSVs. This way, the failure TSVs could be replaced by the redundant ones. Simulation results demonstrate that the self-test circuit and central control logic could detect and recover the broken TSVs correctly. Moreover, the efficiency and area cost of the recovery mechanism is discussed, and it turns out that in a typical case of 96 signal TSVs, the chip yield could reach 90% with TSV failure rate equal to 5%, in exchange for less than 4% area cost of self-test circuit in the whole TSV area.