4D-5 BAW Technologies: Development and Applications within MARTINA, MIMOSA and MOBILIS IST European Projects (Invited)

The paper presents recent results obtained with FBAR and SMR BAW resonators for radiofrequency microelectronics applications within three European projects. The design and implementation of an RF front-end for WCDMA applications using an above-IC BAW band-pass filter is reported (SoC integration) from MARTINA European project. The second European project (MIMOSA) proposes a SiP integration to make an ISM-band wake-up radio receiver using a selective low-noise amplifier (LNA). The selectivity is assured by a SMR-type BAW bandpass filter. The CMOS IC chip and the BAW filter are connected together by wire-bonding or by flip-chipping. The objective of the third European project (MOBILIS) is to develop a robust and cost-effective integrated high-power RF filtering technology and demonstrate the feasibility of a mixed SoC (nanometric CMOS/system integration) and SiP (BiCMOS/power-BAW) RF power transmitter. The targeted transmitter is based on a digital radio transmitter architecture and addresses both the WCDMA and DCS standards. Finally, some solutions are proposed to address the BAW technology future challenges in terms of high frequency applications (> 10 GHz), multi-standard reconfigurability, one-chip radio and combined ladder-stage with lattice stage