Properties of 22nm node extremely-thin-SOI MOSFETs

Author

Rodriguez, N. ; Andrieu, F. ; Navarro, C. ; Faynot, O. ; Gamiz, F. ; Cristoloveanu, S.

Author_Institution

Dept. Electron., Univ. of Granada, Granada, Spain

fYear

2011

fDate

3-6 Oct. 2011

Firstpage

1

Lastpage

2

Abstract

We have investigated the characteristics of 6nm thick, 22nm-node SOI MOSFETs by comparing the transport properties at the front (high-k) and back (SiO₂) interfaces in a temperature range from -50° to 250°C. In addition to the mobility degradation with the channel length, an unusual mobility decrease at the SiO₂ interface is observed in very narrow devices. For the shorter, narrower and thinner devices the transport characteristics tend to be the same regardless the interface where the carriers flow. Finally interface coupling dependence has been used to extract the density of states at the back interface.

Keywords

MOSFET; high-k dielectric thin films; silicon compounds; silicon-on-insulator; SiO₂; back interface; extremely-thin-SOI MOSFET; front high-k interface; interface coupling dependence; mobility degradation; size 22 nm; size 6 nm; temperature 50 degC to 250 degC; transport property; Degradation; Electron mobility; Logic gates; Strain; Temperature; Threshold voltage; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference (SOI), 2011 IEEE International

Conference_Location

Tempe, AZ

ISSN

1078-621X

Print_ISBN

978-1-61284-761-0

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2011.6081681

Filename

6081681