DocumentCode
2349737
Title
The future of SOI transistor technology
Author
Doris, Bruce ; Khakifirooz, Ali ; Cheng, Kangguo
Author_Institution
IBM Res. at Albany, Albany, NY, USA
fYear
2011
fDate
3-6 Oct. 2011
Firstpage
1
Lastpage
27
Abstract
A collection of slides from the author´s conference presentation is given. The following topics are discussed: performance enhancement substrates; conventional devices; fully depleted devices; SOI substrates; planar FD options and non-planar FD options.
Keywords
performance evaluation; silicon-on-insulator; substrates; transistors; SOI substrates; SOI transistor technology; conventional devices; fully depleted devices; nonplanar FD options; performance enhancement substrates; Doping; FinFETs; Gate leakage; Logic gates; Performance evaluation; Subthreshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference (SOI), 2011 IEEE International
Conference_Location
Tempe, AZ
ISSN
1078-621X
Print_ISBN
978-1-61284-761-0
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2011.6081711
Filename
6081711
Link To Document