DocumentCode
2350350
Title
K band very low noise DRO
Author
Elad, Danny ; Madjar, Asher
Author_Institution
RAFAEL, Haifa, Israel
fYear
1995
fDate
7-8 March 1995
Abstract
In this paper we present the design and performance of a K band DRO (Dielectric Resonator Oscillator). The design incorporates NE71000 MESFET and an open source oscillator topology, which we show to be superior in terms of bandwidth and noise. The same circuit can be used (with different resonators) in the frequency range 21-25 GHz. The output power is 10 dbm, frequency stability 4 ppm/degree C and phase noise -88 dbc/Hz@10 kHz (several db better compared to previously published DROs at this frequency range).
Keywords
MESFET circuits; dielectric resonator oscillators; frequency stability; integrated circuit noise; microwave integrated circuits; microwave oscillators; phase noise; 21 to 25 GHz; Al/sub 2/O/sub 3/; K-band; MIC; NE71000 MESFET; SHF; alumina substrate; dielectric resonator oscillator; low noise DRO; open source oscillator topology; phase noise; Bandwidth; Circuit noise; Circuit stability; Circuit topology; Dielectrics; MESFETs; Oscillators; Phase noise; Power generation; Resonant frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Electronics Engineers in Israel, 1995., Eighteenth Convention of
Conference_Location
Tel Aviv, Israel
Print_ISBN
0-7803-2498-6
Type
conf
DOI
10.1109/EEIS.1995.514165
Filename
514165
Link To Document