DocumentCode
2350984
Title
Fully depleted 0.25 μm MOSFETs on SOS, SIMOX and BSOI substrates
Author
Sadana, D.K. ; Mii, Y.J. ; Hovel, H.J. ; Sun, J.Y.-C. ; Taur, Y. ; Demic, C. ; Chan, K. ; Cohen, S.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
1994
fDate
3-6 Oct 1994
Firstpage
6
Lastpage
8
Abstract
We present the first comparison of 0.25 μm nMOSFET devices fabricated on SOS, SIMOX and BSOI substrates with a fully depleted (FD) device design for low power analog and digital applications. All the substrates were processed nearly identically during device fabrication. SOI and SOS materials issues. Si thickness uniformity, device results, back-channel leakage and self heating are discussed
Keywords
MOSFET; SIMOX; elemental semiconductors; leakage currents; semiconductor technology; silicon; silicon-on-insulator; 0.25 micron; BSOI substrates; SIMOX substrates; SOS substrates; Si; back-channel leakage; device fabrication; fully depleted MOSFETs; low power applications; self heating; thickness uniformity; Design optimization; Doping; Fabrication; Heating; Inductors; MOSFETs; Manufacturing; Oxidation; Thickness control; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1994 Proceedings., 1994 IEEE International
Conference_Location
Nantucket, MA
Print_ISBN
0-7803-2406-4
Type
conf
DOI
10.1109/SOI.1994.514202
Filename
514202
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