Doped-channel heterojunction structures for millimeter-wave discrete devices and MMICs

Author

Saunier, P. ; Kao, Y.C. ; Khatibzadeh, A.M. ; Tserng, H.Q. ; Bradshaw, K.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1989

fDate

15-18 Oct 1989

Firstpage

730

Abstract

AlGaAs/InGaAs/GaAs-type heterostructures with one or two channels have been used to fabricate both discrete devices and monolithic amplifiers for millimeter-wave operation. The authors report that 0.25-μm×50-μm discrete devices delivered a power density of 1 W/mm with 2.9-dB gain and 25% efficiency at 60 GHz. A 100-μm monolithic single-stage amplifier demonstrated a record 40% efficiency at 32 GHz, and a two-stage monolithic amplifier achieved a record 31.3% efficiency with 72-mW power and 13-dB gain at 32 GHz

Keywords

III-V semiconductors; MMIC; aluminium compounds; gallium arsenide; indium compounds; microwave amplifiers; solid-state microwave devices; 100 micron; 13 dB; 2.9 dB; 25 percent; 31.3 percent; 32 GHz; 40 percent; 60 GHz; 72 mW; AlGaAs-InGaAs-GaAs; MM-wave; MMIC; doped channel heterojunction structures; millimeter-wave discrete devices; monolithic single-stage amplifier; two-stage monolithic amplifier; Epitaxial layers; Gain; Gallium arsenide; Heterojunctions; Indium gallium arsenide; MMICs; Photonic band gap; Power amplifiers; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Military Communications Conference, 1989. MILCOM '89. Conference Record. Bridging the Gap. Interoperability, Survivability, Security., 1989 IEEE

Conference_Location

Boston, MA

Type

conf

DOI

10.1109/MILCOM.1989.104019

Filename

104019