DocumentCode
2353878
Title
Semiconductor silicon carbide-expectation for power devices
Author
Matsunami, H.
Author_Institution
Kyoto University
fYear
1990
fDate
1990
Firstpage
13
Lastpage
18
Keywords
Chemical vapor deposition; Crystalline materials; Crystallization; Crystals; Epitaxial growth; Light emitting diodes; Semiconductor materials; Silicon carbide; Temperature; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
ISSN
1063-6854
Type
conf
DOI
10.1109/ISPSD.1990.991051
Filename
991051
Link To Document