Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers

Author

Thompson, M.G. ; Marinelli, C. ; Chu, Y. ; Sellin, R.L. ; Penty, R.V. ; White, I.H. ; van der Poel, M. ; Birkedal, D. ; Hvam, J. ; Ustinov, V.M. ; Lämmlin, M. ; Bimberg, D.

Author_Institution

Photonic Syst. Group, Cambridge Univ., UK

fYear

2004

fDate

25-25 Sept. 2004

Firstpage

53

Lastpage

54

Abstract

Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; optical saturable absorption; quantum confined Stark effect; quantum dot lasers; InGaAs; InGaAs quantum dot lasers; fast absorber recovery time; low absorber saturation power; mode-locking performance; monolithic mode-locked lasers; quantum dot saturable absorbers; weak quantum confined Stark effect; Absorption; Gallium arsenide; Indium gallium arsenide; Laser mode locking; Potential well; Quantum cascade lasers; Quantum dot lasers; Stark effect; US Department of Transportation; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International

Conference_Location

Matsue-shi

Print_ISBN

0-7803-8627-2

Type

conf

DOI

10.1109/ISLC.2004.1382751

Filename

1382751