High characteristic temperature of GaInNAs/GaAs narrow-ridge waveguide laser diodes grown by MOCVD

Author

Mitomo, J. ; Hino, T. ; Hirano, Y. ; Narui, H.

Author_Institution

Sony Corp. Mater. Labs., Kanagawa, Japan

fYear

2004

fDate

25-25 Sept. 2004

Firstpage

71

Lastpage

72

Abstract

By investigating the growth-rate dependence of GaInNAs/GaAs MQW grown by MOCVD, high-performance narrow-ridge laser diodes operating at 1.3 μm have been demonstrated with a low threshold current of 25 mA, a high characteristic temperature of 180 K, and a long lifetime of 10000 hours under 1 mW CW operation at room temperature.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; ridge waveguides; semiconductor growth; waveguide lasers; 1 mW; 1.3 mum; 10000 hour; 180 K; 20 degC; 25 mA; GaInNAs-GaAs; GaInNAs/GaAs laser diode; MOCVD; continuous-wave operation; growth-rate dependence; high characteristic temperature; laser diodes; long device lifetime; low threshold current; narrow-ridge laser diodes; narrow-ridge waveguide; room temperature; semiconductor growth; Diode lasers; Gallium arsenide; Laboratories; MOCVD; Optical materials; Optical waveguides; Quantum well devices; Substrates; Temperature dependence; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International

Conference_Location

Matsue-shi

Print_ISBN

0-7803-8627-2

Type

conf

DOI

10.1109/ISLC.2004.1382760

Filename

1382760