DocumentCode
2355266
Title
High-efficiency InGaAs QW distributed Bragg reflector laser with curved grating for squeezed light generation
Author
Uemukai, Masahiro ; Nozu, Shunsuke ; Suhara, Toshiaki
Author_Institution
Dept. of Electron. Eng., Osaka Univ., Japan
fYear
2004
fDate
25-25 Sept. 2004
Firstpage
83
Lastpage
84
Abstract
A high-efficiency InGaAs quantum-well curved-DBR laser was designed and fabricated using selective-area quantum-well disordering technique. Ultra low noise characteristic below the standard quantum limit was achieved from the monolithic curved-DBR laser.
Keywords
III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser noise; optical design techniques; optical squeezing; quantum well lasers; InGaAs; InGaAs QW distributed Bragg reflector laser; curved grating; selective-area quantum-well disordering technique; squeezed light generation; ultralow noise characteristic; Bragg gratings; Distributed Bragg reflectors; Indium gallium arsenide; Laser modes; Laser noise; Pump lasers; Quantum well lasers; Reflectivity; Semiconductor device noise; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location
Matsue-shi
Print_ISBN
0-7803-8627-2
Type
conf
DOI
10.1109/ISLC.2004.1382766
Filename
1382766
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