• DocumentCode
    235553
  • Title

    Novel slurry injection system for improved slurry flow, enhanced material removal and reduced defects in CMP

  • Author

    Yun Zhuang ; Sampurno, Yasa ; Borucki, Leonard ; Philipossian, Ara

  • Author_Institution
    Araca, Inc., Tucson, AZ, USA
  • fYear
    2014
  • fDate
    19-21 Nov. 2014
  • Firstpage
    45
  • Lastpage
    49
  • Abstract
    In this study, a novel slurry injection system (SIS) is introduced. SIS is placed on top of the pad which conformally rides on the pad surface during polishing and presents a thin and uniform slurry film to the wafer. Examples of SIS installed on various 200 and 300 mm commercial polishers are shown. Removal rate and polishing defects are compared between SIS and the conventional pad center area slurry application method. Through more efficient slurry delivery and reduced slurry mixing and dilution, SIS has achieved more uniform slurry flow, higher material removal rate or the same removal rate with significantly lower slurry consumption, and lower number of wafer-level polishing defects than the conventional slurry application method.
  • Keywords
    chemical mechanical polishing; semiconductor technology; slurries; CMP; SIS; chemical mechanical polishing; defect reduction; dilution; enhanced material removal; material removal rate; pad center area slurry application method; slurry film; slurry flow; slurry injection system; slurry mixing; wafer-level polishing defect; Applicators; Films; Planarization; Slurries; Standards; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Planarization/CMP Technology (ICPT), 2014 International Conference on
  • Conference_Location
    Kobe
  • Print_ISBN
    978-1-4799-5556-5
  • Type

    conf

  • DOI
    10.1109/ICPT.2014.7017242
  • Filename
    7017242