DocumentCode
2355651
Title
Multicommutation of IGBTs in large inverters
Author
Bakran, Mark M. ; Helsper, Martin ; Eckel, Hans-Gunter ; Nagel, Andreas
Author_Institution
A&D LD TD, Siemens AG, Nuremberg
fYear
2005
fDate
11-14 Sept. 2005
Abstract
Large inverter-systems are characterized by a significant number of parallel IGBTs operating on the same dc-link. The IGBT-phases are cross coupled by their mutual stray inductance. This paper investigates the special effects occurring due to nearly simultaneous switching of multiple IGBTs. This operation can cause a significant increase in stress on the IGBT and on the free wheel diode. Countermeasures to cope with these problems are discussed
Keywords
commutation; inductance; insulated gate bipolar transistors; invertors; power semiconductor diodes; power semiconductor switches; IGBT switching; free wheel diode; large inverters; multicommutation; mutual stray inductance; Circuit testing; Diodes; Inductance; Insulated gate bipolar transistors; Inverters; Mutual coupling; Stress; Switches; Voltage control; Wheels; Device application; Free wheel diode; IGBT; Parallel operation; Voltage Source Inverters (VSI);
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications, 2005 European Conference on
Conference_Location
Dresden
Print_ISBN
90-75815-09-3
Type
conf
DOI
10.1109/EPE.2005.219249
Filename
1665439
Link To Document