DocumentCode
2355894
Title
Low-threshold operation of distributed reflector laser with width modulated wirelike active regions
Author
Ohira, Kazuya ; Murayama, Tomonori ; Hirose, Masato ; Yagi, Hideki ; Tamura, Shigeo ; Arai, Shigehisa
Author_Institution
Res. Center for Quantum Nano Electron., Tokyo Inst. of Technol., Japan
fYear
2004
fDate
25-25 Sept. 2004
Firstpage
133
Lastpage
134
Abstract
A distributed reflector (DR) laser consisting of an active DFB section and a passive DBR section was realized by modulating widths of wirelike active regions. A threshold current as low as 1.5 mA, a differential quantum efficiency from the front facet of 21% and a sub-mode suppression ratio (SMSR) over 50 dB were realized for a stripe width of 3.4 μm and a DFB section length of 150.
Keywords
distributed Bragg reflector lasers; laser modes; semiconductor lasers; 1.5 mA; 150 mum; 21 percent; 3.4 mum; differential quantum efficiency; distributed reflector laser; low-threshold operation; submode suppression ratio; width modulated wirelike active regions; Distributed Bragg reflectors; Energy consumption; Gratings; Laser theory; Potential well; Power lasers; Quantum well lasers; Reflectivity; Threshold current; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location
Matsue-shi
Print_ISBN
0-7803-8627-2
Type
conf
DOI
10.1109/ISLC.2004.1382792
Filename
1382792
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