P2O-9 Wet Etching of LGS crystals in H3PO4:H2O - Characterization of Anisotropy and Simulation

Author

Leblois, T.G. ; Tellier, C.R. ; Akil, M.

Author_Institution

Dept. Electronique Chronometrie Piezoelectricite, InstitutFEMTO-ST, Besancon

fYear

2006

fDate

2-6 Oct. 2006

Firstpage

1931

Lastpage

1934

Abstract

This paper presents new results on the anisotropic chemical etching of LGS crystals in an acidic solution and focuses on orientation effects in 2D etching shapes (surface profiles, out-of-roundness profiles). Experimental results are analyzed in terms of a kinematic and tensorial model for the anisotropic dissolution. The dissolution constants that are determined from experiments are used as database for the simulator TENSOSIM. Simulated etching shapes are found to be in agreement with experimental shapes. The simulator with the proposed database is thus a convenient tool to design new LGS mechanical microstructures

Keywords

acoustic devices; dissolving; etching; gallium compounds; lanthanum compounds; silicon compounds; surface structure; H₃PO₄-H₂O; LGS crystals; La₃Ga₅SiO₁₄; TENSOSIM simulator; chemical etching; dissolution constants; mechanical microstructures; out-of-roundness profiles; surface profiles; wet etching; Acoustic waves; Anisotropic magnetoresistance; Chemicals; Crystal microstructure; Databases; Kinematics; Resonance; Shape; Surface topography; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2006. IEEE

Conference_Location

Vancouver, BC

ISSN

1051-0117

Print_ISBN

1-4244-0201-8

Electronic_ISBN

1051-0117

Type

conf

DOI

10.1109/ULTSYM.2006.484

Filename

4152340