• DocumentCode
    235611
  • Title

    FEOL post CMP cleaner development

  • Author

    Cuong Tran ; Medd, Steve ; Frye, Donald

  • Author_Institution
    Entegris, Tempe, AZ, USA
  • fYear
    2014
  • fDate
    19-21 Nov. 2014
  • Firstpage
    125
  • Lastpage
    128
  • Abstract
    Changes to the number and types of films exposed during cleaning and changes to slurries have promoted a new need for formulated cleans in the Front End of the Line (FEOL). Changes to the particles used in slurries have made many of the traditional pCMP cleaners ineffective for this process. Further, the ideal clean should be a one-step process. These changes are pushing companies to consider formulated cleans over commodities cleans. A formulated clean can remove particles and metal contamination all in one step while protecting the underlying thin films. We will show a path toward the development of these new cleaners.
  • Keywords
    MOSFET; chemical mechanical polishing; contamination; planarisation; semiconductor device manufacture; slurries; surface cleaning; thin film devices; FEOL; FinFET; chemical mechanical planarization; front end of the line; metal contamination; pCMP cleaners; postCMP cleaner; thin films; Cleaning; Films; Silicon; Silicon compounds; Slurries; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Planarization/CMP Technology (ICPT), 2014 International Conference on
  • Conference_Location
    Kobe
  • Print_ISBN
    978-1-4799-5556-5
  • Type

    conf

  • DOI
    10.1109/ICPT.2014.7017262
  • Filename
    7017262