DocumentCode
235611
Title
FEOL post CMP cleaner development
Author
Cuong Tran ; Medd, Steve ; Frye, Donald
Author_Institution
Entegris, Tempe, AZ, USA
fYear
2014
fDate
19-21 Nov. 2014
Firstpage
125
Lastpage
128
Abstract
Changes to the number and types of films exposed during cleaning and changes to slurries have promoted a new need for formulated cleans in the Front End of the Line (FEOL). Changes to the particles used in slurries have made many of the traditional pCMP cleaners ineffective for this process. Further, the ideal clean should be a one-step process. These changes are pushing companies to consider formulated cleans over commodities cleans. A formulated clean can remove particles and metal contamination all in one step while protecting the underlying thin films. We will show a path toward the development of these new cleaners.
Keywords
MOSFET; chemical mechanical polishing; contamination; planarisation; semiconductor device manufacture; slurries; surface cleaning; thin film devices; FEOL; FinFET; chemical mechanical planarization; front end of the line; metal contamination; pCMP cleaners; postCMP cleaner; thin films; Cleaning; Films; Silicon; Silicon compounds; Slurries; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Planarization/CMP Technology (ICPT), 2014 International Conference on
Conference_Location
Kobe
Print_ISBN
978-1-4799-5556-5
Type
conf
DOI
10.1109/ICPT.2014.7017262
Filename
7017262
Link To Document