DocumentCode

2357040

Title

A study on a high blocking voltage UMOS-FET with a double gate structure

Author

Baba, Y. ; Matsuda, N. ; Yanagiya, S. ; Hiraki, S. ; Yasuda, S.

Author_Institution

Toshiba Corporation Japan

fYear

1992

fDate

1992

Firstpage

300

Lastpage

302

Keywords

Breakdown voltage; Double-gate FETs; Electric breakdown; Electric resistance; Fabrication; Impurities; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on

Type

conf

DOI

10.1109/ISPSD.1992.991291

Filename

991291