Effect of slurry temperature on removal characteristics in cadmium telluride CMP

Cadmium Telluride (CdTe), one of II-VI group compound semiconductors, was used as a material of X-Ray detector, since it has good features of high absorption rate and high conversion efficiency of X-Ray, resulting from its excellent electric properties. However, a rough surface of the CdTe thin-film causes a delay of electric speed and current concentration to the uneven part of the surface, resulting in making electric uniformity worse. Therefore, it is necessary to improve the surface roughness of the CdTe X-Ray detector which is possible to achieve a higher electric uniformity, a shorter signal delay, and more clear images.