Accurate simulation of the frequency response of millimetre-wave sige amplifiers

Author

Milner, Leigh E. ; Hall, Leonard T. ; Parker, Michael E.

Author_Institution

Defence Sci. & Technol. Organ., Adelaide, SA, Australia

fYear

2014

fDate

26-27 June 2014

Firstpage

49

Lastpage

50

Abstract

A method of accurately simulating the frequency response of a millimeter-wave SiGe amplifier is presented. Electromagnetic (EM) simulation is applied to the cascode sub-circuit in preference to parasitic extraction resulting in improved agreement between simulated and measured performance. Including resistors and capacitors in the EM simulation allows coupling and resonance effects to be captured which improves the simulation accuracy. Close agreement is obtained between the measured and simulated results for a 30 to 40 GHz two-stage transformer coupled amplifier fabricated using IHP´s 0.25μm SG25H1 process.

Keywords

Ge-Si alloys; capacitors; frequency response; millimetre wave amplifiers; resistors; EM simulation; IHP SG25H1 process; SiGe; capacitors; cascode subcircuit; coupling effects; electromagnetic simulation; frequency 30 GHz to 40 GHz; frequency response; millimetre-wave amplifiers; parasitic extraction; resistors; resonance effects; simulation accuracy; size 0.25 mum; two-stage transformer coupled amplifier; BiCMOS integrated circuits; Electromagnetics; Foundries; Software; Electromagnetic simulation; Parasitic Extraction; SiGe Amplifier; mm-wave integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (AMS), 2014 1st Australian

Conference_Location

Melbourne, VIC

Type

conf

DOI

10.1109/AUSMS.2014.7017360

Filename

7017360