DocumentCode
2357769
Title
Characterisation and modelling of planar on-chip integrated Peltier elements for highly localised thermal stabilisation and cooling
Author
Wijngaards, D.D.L. ; Wolffenbuttel, R.F.
Author_Institution
Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
fYear
2002
fDate
12-14 March 2002
Firstpage
105
Lastpage
112
Abstract
On-chip integrated Peltier elements are ideally suited for highly localised on-chip thermal stabilisation. The nonidealities are analysed with respect to the impact on device performance and are used to derive the proper performance optimisation criteria. Furthermore, an FEA model is presented which incorporates the Peltier effect itself, as well as the nonidealities. As thermoelectric material, polySiGe is used, because of its good balance between thermoelectric performance and fabrication compatibility. Both the experimental validation of the thermophysical properties, as well as the performance measurements on the first generation integrated Peltier elements are presented and discussed.
Keywords
Peltier effect; cooling; finite element analysis; integrated circuit packaging; thermal resistance; thermal stability; FEA model; cooling; device performance; fabrication compatibility; highly localised thermal stabilisation; performance optimisation criteria; planar on-chip integrated Peltier elements; polySiGe; thermoelectric material; thermophysical properties; Electronics cooling; Fabrication; Germanium silicon alloys; Instruments; Mechanical factors; Silicon germanium; Temperature; Thermal resistance; Thermoelectric devices; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Thermal Measurement and Management, 2002. Eighteenth Annual IEEE Symposium
Conference_Location
San Jose, CA, USA
ISSN
1065-2221
Print_ISBN
0-7803-7327-8
Type
conf
DOI
10.1109/STHERM.2002.991354
Filename
991354
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