• DocumentCode
    2358079
  • Title

    P3O-6 Basic Study on SAW Device with Semiconductor Layer as IDTs and Control Means for Variable Operation

  • Author

    Hohkawa, K. ; Mizusawa, T. ; Koh, K. ; Nishimura, K. ; Shigekawa, N.

  • Author_Institution
    Fac. of Eng., Kanagawa Inst. of Technol., Atsugi
  • fYear
    2006
  • fDate
    2-6 Oct. 2006
  • Firstpage
    2314
  • Lastpage
    2317
  • Abstract
    This paper studies monolithic realization of SAW and layer wave devices using semiconductor layer in GaN/Al2O3. We try to fabricate transducer and control means with N+ layer and AlGaN/GaN hetero-structures. Experimental studies clarified that N + layer is effectively used as IDTs and the hetero structure is useful for realizing field effect variable SAW devices monolithically
  • Keywords
    III-V semiconductors; III-VI semiconductors; aluminium compounds; gallium compounds; interdigital transducers; nitrogen; semiconductor thin films; surface acoustic wave devices; AlGaN-GaN; GaN-Al2O3; IDT; N+; SAW device; interdigital transducer; layer wave devices; semiconductor layer; surface acoustic waves; transducer fabrication; variable operation; Acoustic waves; Aluminum gallium nitride; Aluminum oxide; Electrodes; Gallium nitride; HEMTs; Piezoelectric films; Semiconductor films; Surface acoustic wave devices; Surface acoustic waves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 2006. IEEE
  • Conference_Location
    Vancouver, BC
  • ISSN
    1051-0117
  • Print_ISBN
    1-4244-0201-8
  • Electronic_ISBN
    1051-0117
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2006.585
  • Filename
    4152441
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2358079