Demonstration of a 6H-SiC CMOS technology

Author

Slater, D.B., Jr. ; Johnson, G.M. ; Lipkin, L.A. ; Suvorov, A.V. ; Palmour, J.W.

Author_Institution

Cree Res. Inc., Durham, NC, USA

fYear

1996

fDate

26-26 June 1996

Firstpage

162

Lastpage

163

Abstract

Recent improvements in 6H-SiC enhancement-mode NMOS and PMOS device fabrication and performance have resulted in operational circuits up to 500/spl deg/C. These developments have now led to the first demonstration of monolithically integrated complementary MOSFET (CMOS) circuits in SiC. CMOS is an attractive technology because it is readily adaptable for mixed analog and digital applications. The availability of current source (active) loads makes it possible to generate large voltage gains with relatively small supply voltages and currents which has not been possible in SiC until now. CMOS also provides for low power (stand-by) digital circuits. Lower supply voltage operation and reduced circuit design complexity will enhance high temperature reliability.

Keywords

CMOS integrated circuits; integrated circuit technology; semiconductor materials; silicon compounds; 500 C; 6H-SiC CMOS technology; SiC; circuit design; current source load; enhancement-mode device fabrication; high temperature reliability; low power digital circuit; low voltage operation; monolithically integrated complementary MOSFET circuit; voltage gain; Availability; CMOS digital integrated circuits; CMOS technology; Current supplies; Fabrication; Integrated circuit technology; MOS devices; MOSFET circuits; Silicon carbide; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1996. Digest. 54th Annual

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-3358-6

Type

conf

DOI

10.1109/DRC.1996.546421

Filename

546421