Palladium-copper inter-diffusion during copper activation for electroless Nickel plating process on Copper power metal

Author

Poo Khai Yee ; Wan Tatt Wai ; Yong Foo Khong

Author_Institution

Infineon Technol. (Kulim) Sdn Bhd, Kulim, Malaysia

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

219

Lastpage

222

Abstract

Electroless Nickel deposition on Copper metallization required a thin Palladium layer (<; 5nm) as catalyst for Copper activation purpose. By using several physical failure analysis approaches, Palladium-Copper inter-diffusion behavior was proven affected by flow rate variation of chemical solution during Copper activation process.

Keywords

copper; diffusion; electroless deposition; electroplating; failure analysis; integrated circuit interconnections; lead bonding; nickel; palladium; semiconductor device metallisation; Ni; Pd-Cu; chemical solution; copper activation process; copper metallization; copper power metal; electroless nickel deposition; electroless nickel plating process; flow rate variation; palladium layer; palladium-copper interdiffusion behavior; physical failure analysis; Decision support systems; Failure analysis; Integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the

Conference_Location

Marina Bay Sands

ISSN

1946-1542

Print_ISBN

978-1-4799-3931-2

Type

conf

DOI

10.1109/IPFA.2014.6898185

Filename

6898185

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=235880