Hourglass concept for RRAM: A dynamic and statistical device model

Author

Degraeve, Robin ; Fantini, Andrea ; Raghavan, N. ; Goux, L. ; Clima, S. ; Chen, Y.Y. ; Belmonte, A. ; Cosemans, S. ; Govoreanu, B. ; Wouters, D.J. ; Roussel, Philippe ; Kar, Gouri Sankar ; Groeseneken, Guido ; Jurczak, Malgorzata

Author_Institution

Imec, Leuven, Belgium

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

245

Lastpage

249

Abstract

In this paper we review a dynamic device model for filamentary RRAM in HfO-based dielectrics. We summarize its transient modeling features and its statistical properties. The model explains with satisfactory quantitative resolution all main features of the RRAM switching, not just the voltage, time and temperature dependence, but also statistical fluctuations resulting from atomistic motion and their resulting LRS and HRS-distributions.

Keywords

dielectric materials; hafnium compounds; random-access storage; HRS-distributions; HfO; HfO-based dielectrics; LRS -distributions; RRAM switching; atomistic motion; dynamic device model; filamentary RRAM; hourglass concept; resistive random access memory; statistical device model; statistical fluctuations; statistical properties; transient modeling; Hafnium compounds; Resistance; Stochastic processes; Switches; Tin; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the

Conference_Location

Marina Bay Sands

ISSN

1946-1542

Print_ISBN

978-1-4799-3931-2

Type

conf

DOI

10.1109/IPFA.2014.6898205

Filename

6898205