±0.5V electronically and linearly tunable CMOS transconductor for low-voltage applications

Author

Kaewdang, Khanittha

Author_Institution

Dept. of Electr. & Electron. Eng., Ubon Ratchathani Univ., Ubon Ratchathani, Thailand

fYear

2014

fDate

26-28 Nov. 2014

Firstpage

1

Lastpage

4

Abstract

This paper proposed a CMOS circuit technique for realizing an electronically and linearly tunable transconductor for low-voltage low-power applications. The realization technique is achieved by squaring the transconductance gain (g_m) of the CMOS OTA. Its input stage is design based on the dynamic threshold voltage transistor (DTMOS) for low-voltage, low-power transconductor. Its g_m can be linearly tuned by an external bias current for more than 3 decades (100nA-400μA), with less than 3% nonlinearity for the input-voltage linear range of about 0.15Vp. The proposed transconductor operates under low supply voltage of ±0.5V.

Keywords

CMOS analogue integrated circuits; biomedical electronics; low-power electronics; operational amplifiers; CMOS OTA; CMOS circuit technique; DTMOS; dynamic threshold voltage transistor; electronically tunable CMOS transconductor; external bias current; input-voltage linear range; linearly tunable CMOS transconductor; low supply voltage; low-power transconductor; low-voltage transconductor; transconductance gain; voltage 0.5 V; CMOS integrated circuits; CMOS technology; Equations; MOSFET; Threshold voltage; Transconductance; CMOS transconductor; linearly tuned; low-voltage low-power;

fLanguage

English

Publisher

ieee

Conference_Titel

Biomedical Engineering International Conference (BMEiCON), 2014 7th

Conference_Location

Fukuoka

Type

conf

DOI

10.1109/BMEiCON.2014.7017443

Filename

7017443