DocumentCode
2360170
Title
Burn-in effects on total dose radiation sensitivity
Author
Gorelick, Jerry ; McClure, Steve ; Pease, Ronald L.
Author_Institution
Hughes Space & Commun., Los Angeles, CA, USA
fYear
1998
fDate
36000
Firstpage
127
Lastpage
131
Abstract
The effects of burn-in on the sensitivity to total dose radiation of discrete transistors and linear integrated circuits (ICs) of several types from different manufacturers are examined. Significant differences in the behavior of different devices are noted. The impact of burn-in on radiation hardness assurance is assessed
Keywords
analogue integrated circuits; integrated circuit reliability; integrated circuit testing; leakage currents; life testing; radiation hardening (electronics); semiconductor device reliability; semiconductor device testing; transistors; burn-in effects; discrete transistors; linear integrated circuits; radiation hardness assurance; total dose radiation sensitivity; Analog integrated circuits; Bipolar transistor circuits; Circuit testing; Degradation; FETs; Integrated circuit testing; MOSFET circuits; Manufacturing; Packaging; Performance evaluation;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 1998. IEEE
Conference_Location
Newport Beach, CA
Print_ISBN
0-7803-5109-6
Type
conf
DOI
10.1109/REDW.1998.731491
Filename
731491
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