DocumentCode
2360214
Title
Electron Beam-induced Light Emission and Transport in GaN Nanowires
Author
Tringe, Joseph ; MoberlyChan, Warren ; Stevens, Charles ; Davydov, Albert ; Motayed, Abhishek
Author_Institution
Chem. & Mater. Sci. Directorate, Lawrence Livermore Nat. Lab., CA
fYear
2006
fDate
Sept. 2006
Firstpage
1
Lastpage
4
Abstract
The authors report observations of electron beam-induced light from GaN nanowires grown by chemical vapor deposition. GaN nanowires were modified in-situ with deposited opaque platinum coatings to estimate the extent to which light is channeled to the ends of nanowires. Some evidence of light channeling was found, but wire microstructure and defects play an important role in light scattering and transport, limiting the extent to which light is confined
Keywords
chemical vapour deposition; electron beams; gallium compounds; light scattering; nanowires; wide band gap semiconductors; GaN; chemical vapor deposition; electron beam; light channeling; light emission; light scattering; light transport; nanowires; Chemical vapor deposition; Coatings; Electron beams; Electron emission; Gallium nitride; Light scattering; Microstructure; Nanowires; Platinum; Wire; GaN; light; nanowire; optical; waveguide;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Networks and Workshops, 2006. NanoNet '06. 1st International Conference on
Conference_Location
Lausanne
Print_ISBN
1-4244-0391-X
Type
conf
DOI
10.1109/NANONET.2006.346228
Filename
4152811
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